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Nexperia partners with Ricardo to develop GaN based EV inverter design

Nexperia B.V.
Nexperia recently announced partnership with renowned automotive engineering consulting company, Ricardo, to produce a technology demonstrator for an EV inverter based on gallium nitride (GaN) technology. GaN is the preferred switch for these applications as GaN FETs lead to systems with greater efficiencies at lower costs with improved thermal performance and simpler switching topologies. In automotive terms this means that the vehicle has a greater range – the major concern for anyone looking to buy an electric vehicle. GaN is now on the cusp of replacing silicon based IGBTs and SiC as the preferred technology for the traction inverters used in plug-in hybrids or full battery electric cars.

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