Categories
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MOSFET
High-speed switching contributes to the downsizing of LCD parts.
Higher breakdown voltage than Si devices, yet lower switching and conduction loss -
Schottky diodes
Uses a more robust and reliable MPS design than Si devices.
In combination with the Wolfspeed MOSFET, offering a higher level of efficiency. -
Power modules
Standard power modules improve performance with the latest SiC chipsets, minimizing package parasitics.
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Gate driver board
You can begin evaluating high-efficiency devices with a gate driver board equipped with a SiC chipset.
Special and New Product Information
1200V SiC MOSFET
C3D SiC Schottky Diode
XM3 Power Module
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Discrete
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MMIC
Cree's LED chips combine high efficiency InGaN materials with a unique G•SIC® substrate to provide superior price / performance for maximum brightness LEDs.
Video
How Does the Cree MOSFET Beat an IGBT?
The Power of SiC
Cree RF GaN-on-SiC Foundry Process & Product Capabilities Overview
High Temperature, Wide Bandgap Underhood Inverter
SiC Converters in the Lab
Using SiC Devices to Improve an LED Driver
XLamp XHP50 and XHP70 LEDs
Cree XLamp CXA Product Family Overview
Everything about Cree RF
Tools
Educational Center
About Cree/Wolfspeed
Cree's Power or RF division is known as the Wolfspeed brand and is recognized worldwide. We have a wide product portfolio of SiC power semiconductors and GaN RF solutions.
Cree's LEDs provide the best lighting class performance in the industry and are optimized for applications to minimize system cost. Cree's LEDs are designed to provide easy-to-select, easy-to-use, beautiful, long-lasting, and energy-efficient light.