Categories
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MOSFET
High-speed switching contributes to the downsizing of LCD parts.
Higher breakdown voltage than Si devices, yet lower switching and conduction loss -
Schottky diodes
Uses a more robust and reliable MPS design than Si devices.
In combination with the Wolfspeed MOSFET, offering a higher level of efficiency. -
Power modules
Standard power modules improve performance with the latest SiC chipsets, minimizing package parasitics.
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Gate driver board
You can begin evaluating high-efficiency devices with a gate driver board equipped with a SiC chipset.
Special and New Product Information
WolfPACK SiC Power Modules
C3D SiC Schottky Diode
XM3 Power Module
3rd Generation 650V SiC MOSFET
2nd Generation 1700V SiC MOSFET
6th Generation 650 SiC Schottky Diode
Video
Introducing the Wolfspeed WolfPACK
The Power of SiC
Wolfspeed's New 650V Silicon Carbide MOSFETs
High Temperature, Wide Bandgap Underhood Inverter
SiC Converters in the Lab
Using SiC Devices to Improve an LED Driver
Charge Electric Vehicles Faster with Wolfspeed Silicon Carbide
Wolfspeed Silicon Carbide and Automated Production Lines
If Every Data Center on Earth Used Wolfspeed Silicon Carbide
Tools
Educational Center
About Cree/Wolfspeed
Cree's Power or RF division is known as the Wolfspeed brand and is recognized worldwide. We have a wide product portfolio of SiC power semiconductors and GaN RF solutions.